Precision Temperature Sensing for Crystal Growth

Ensuring uniform temperature profiles for high-purity silicon wafer manufacturing.

Precise temperature control for the growth of crystals used in optoelectronic devices.

Supporting experimental setups requiring accurate and reliable temperature measurements.

Monitoring and controlling temperatures in furnaces used for crystal growth.

Temperature sensing solutions for the production of specialty glass materials.

Ensuring optimal temperature conditions for the growth of LED substrates.

Accurate temperature control during the fabrication of photovoltaic materials.

• Czochralski (CZ) Process:
Pyrometers are commonly aligned to measure the temperature of the growing crystal or the melt surface through viewports in the reactor chamber. This allows for precise control of the crystal pulling and growth rate, which is crucial for producing high-quality single crystals

• Physical Vapor Transport (PVT) Systems:
In PVT reactors (used for materials like SiC), pyrometers are positioned to monitor the temperature profile of the crystal growth zone, often with motorized alignment for remote, real-time adjustments

• Polysilicon and Multi-crystalline Silicon Growth - Pyrometers are used to monitor:
→ Heater temperature: Mounted to view the heater or heating elements, ensuring the correct thermal environment
→ Silicon melt surface temperature: Focused on the melt through a dedicated optical path or viewport, often using dual (ratio) pyrometers to compensate for window contamination and variable emissivity
→ Liquid-solid interface temperature: Advanced setups may use pyrometers to track the temperature at the moving interface, which is vital for controlling the solidification front and crystal quality